KTC3227 transistor (npn) features power dissipation p cm : 1 w (tamb=25 ) collector current i cm : 400 ma collector-base voltage v (br)cbo : 80 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 1ma, i e =0 80 v collector-emitter breakdown voltage v(br) ceo i c = 5 ma , i b =0 80 v emitter-base breakdown voltage v(br) ebo i e = 1 ma, i c =0 5 v collector cut-off current i cbo v cb =50v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce = 2v, i c = 50ma 70 240 dc current gain h fe(2) v ce = 2v, i c = 200ma 40 collector-emitter saturation voltage v ce (sat) i c = 200ma, i b = 20ma 0.4 v base-emitter voltage v be v ce = 2v, i c = 5ma 0.55 0.8 v transition frequency f t v ce = 10v, i c = 10ma 80 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mh z 10 pf classification of h fe rank o y range 70-140 120-240 1 2 3 to-92l 1. emitter 2. collector 3. base KTC3227 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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